Wen I. Wang


1320 S.W. Mudd
Mail Code 4712

Tel(212) 854-1748

Wen Wang is an eminent researcher in optoelectronic materials, devices, and molecular beam epitaxy. With a focus on research to create knowledge that can be applied to real-world problems, his current projects include nano and heterostructure material properties, optoelectronic devices, infrared lasers, detectors, and photovoltaics.

Research Interests

Quantum and heterostructure optoelectronics, materials and devices, molecular beam epitaxy

Wang has contributed more than 300 journal articles in the areas of heterostructure device physics, high speed transistors, semiconductor lasers, photodetectors, molecular beam epitaxy, and surface science. Examples of his work include research on Type-II InAs/GaSb superlattices for mid- and long-wavelength applications; high detectivity InGaAsSb photodetectors with cutoff wavelength up to 2.6 um; interface and optical properties of InGaAsNSb quantum wells; mid-infrared InGaAsSb quantum well lasers with digitally grown tensile-strained AlGaAsSb barriers; strain-compensated InGaAsSb quantum well lasers emitting at 2.43 um; and the invention of a new quinternary dilute nitride InGaAsSbN for mid-infrared optoelectronic devices.

Wang holds a BS in physics from National Taiwan University (1975) and received his MEng (1979) and PhD in electrical engineering from Cornell University. He joined Columbia University in 1987 where he holds a joint appointment in the Departments of Electrical Engineering and Applied Physics and Applied Mathematics. Prior to that, he was a visiting associate professor in EECS at the Massachusetts Institute of Technology. Between 1981 and 1982, he worked at the Rockwell Science Center and between 1982 and 1987 he worked at the IBM T. J. Watson Research Center. Wang has served on many technical review panels, including the New York State Science and Technology Foundation Center for Advanced Technology program on opto-electronics. He is a fellow of the Institute of Electrical and Electronics Engineers, the American Physical Society, John Simon Guggenheim Foundation, and is an Electron Device Society distinguished lecturer.


  • Rockwell Science Center, 1981-1982


  • Professor of electrical engineering and applied physics and applied mathematics, Columbia Engineering, 1987-
  • Visiting associate professor of electrical engineering and computer science, MIT, Fall 1986
  • IBM T. J. Watson Research Center, 1982-1987


  • Fellow, Institute of Electrical and Electronics Engineers
  • Fellow, American Physical Society
  • Fellow, John Simon Guggenheim Foundation
  • Distinguished Lecturer, Electron Device Society 


  • “Type-II InAs/GaSb superlattices grown by molecular beam epitaxy for infrared detector applications” SPIE conference on Infrared Sensors, Devices, and Applications II, San Diego, CA. 2012. Proc. SPIE 8512, Infrared Sensors, Devices, and Applications II, edited by Paul D. LeVan et al., 2012.
  • "High detectivity AlGaAsSb/InGaAsSb photodetectors grown by molecular beam epitaxy with cutoff wavelength up to 2.6 um", 15th International Conference on Molecular Beam Epitaxy, Vancouver, BC, Canada, Aug. 3–8, 2008; J. Crystal Growth, 311, 1893–1896 (2009).
  • "Mid-infrared InGaAsSb quantum well lasers with digitally grown tensile-strained AlGaAsSb barriers", J. Vac. Sci. & Tech. B, v 25, 1083 (2007).
  • "Molecular-beam epitaxy of phosphor-free 1.3um InAlGaAs multiple quantum well lasers on InP (100)", J. Vac. Sci. & Tech. B, v 25, 1090 (2007).
  • "Molecular beam epitaxial growth of InGaAsNSb/GaAs quantum wells for long wavelength semiconductor lasers", Appl. Phys. Lett. 75, 178 (1999); Appl. Phys. Lett. 76, 795 (2000); IEEE Photon. Tech. Lett. 12, 128 (2000). Invention of the InGaAsNSb quinternary compound.
  • Y. Zhao, M.J. Jurkovic, and W.I. Wang, "Characterization of AuGe and AuTe based ohmic contacts on InAs n-channel high electron mobility transistors", J. Electrochem. Soc. 14, 1067 (1997).
  • X. Li, J.L. Jimenez, M.J. Jurkovic, and W.I. Wang, "Novel approach for integration of an AlGaAs/GaAs heterojunction bipolar transistor with an InGaAs quantum well laser, in Optoelectronic Integrated Circuits, Proc. SPIE 3006, pp. 126-133 (1997).
  • I.W. Tao and W.I. Wang, "Strained InGaAs quantum well lasers grown on (111) GaAs", Electron. Lett. 28, 705 (1992).
  • L. F. Luo, R. Beresford, and W. I. Wang, "Interband tunneling in polytype InAs/GaSb/AlSb heterostructures" Appl. Phys. Lett. 55, 2023 (1989).
  • L.F. Luo, R. Beresford, and W.I. Wang, “Resonant tunneling in AISb/InAs/AISb double-barrier heterostructures” Appl. Phys. Lett. 53, 2320 (1988).